Dry Development of Resists Exposed to Focused Gallium Ion Beam

スポンサーリンク

概要

• 論文の詳細を見る

• This report proposes a new lithography method employing focused ion beam exposure and subsequent dry development. It is shown that the plasma etching rate of resists exposed to gallium ions is much lower than that of resists not exposed. As this characteristic is applied to resist lithography, fine patterns can be obtained successfully. This dry development is applicable to many kinds of resist, such as PMMA, CMS, PGMA, FBM etc.

• 社団法人応用物理学会の論文
• 1980-10-05

著者

• Kuwano Hiroki

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Kuwano Hiroki

  Musashino Electrical Communication Laboratory Nippon Telegzoph And Telephone Public Corporation

• YOSHIDA Kazue

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• YAMAZAKI Shin-ichi

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Yoshida Kazue

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Yamazaki Shin-ichi

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Dry Development of Resists Exposed to Focused Gallium Ion Beam
• Dry Cleaning of Si Surface Contamination by Reactive Sputter Etching
• X-Ray Lithography : A-1: ADVANCED LITHOGRAPHY AND PROCESS

スポンサーリンク