Estimation of the Intra-Band Relaxation Time in Undoped AlGaAs Injection Laser
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概要
- 論文の詳細を見る
The intra-band relaxation time of the carriers was estimated from the spontaneously emitted profile for AlGaAs injection laser which has an undoped active region. The relaxation time is estimated in the range of τ_<in>=(0.7〜1.0)×10^<-13> s at 298 K by comparison between theoretical analysis and experimental measurement. The relaxation time increases slightly at low temperatures and is estimated as τ_<in>=(0.7〜1.5)×10^<-13> s at 100 K, but is almost constant with variation of the injection level. The band-tail effect is explained by the intra- band relaxation of electrons.
- 社団法人応用物理学会の論文
- 1980-01-05
著者
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Ishiguro Hisanori
Department Of Electrical Engineering Faculty Of Technology Kanazawa University
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Yamada Minoru
Department Of Developmental Infectious Diseases Research Institute Osaka Medical Center For Maternal
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Yamada Minoru
Department Of Electrical Engineering Faculty Of Technology Kanazawa University
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NAGATO Hitoshi
Department of Electrical Engineering, Faculty of Technology, Kanazawa University
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Nagato Hitoshi
Department Of Electrical Engineering Faculty Of Technology Kanazawa University
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