Cross-Over Interconnections in P-MOS Integrated Circuits Using Two-Photomask Process
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1977-08-05
著者
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SHOHNO Katsufusa
Faculty of Science and Technology, Sophia University
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Hirayama Makoto
Faculty Of Science And Technolgy Sophia University
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Hirayama Makoto
Faculty Of Science And Technology Sophia University
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Shohno Katsufusa
Faculty Of Science And Technology Sophia University
関連論文
- Free Boron Monophosphide Wafers
- 47-Stage P-MOS Ring Oscillator Circuit Using the Two-Photomask Fabrication Process
- Cross-Over Interconnections in P-MOS Integrated Circuits Using Two-Photomask Process
- Hardness of Epitaxially Grown Rhombohedral Boron Phosphide