Behavior of Various Insulating Films in High Temperature Water and Moisture

概要

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Behavior of various insulating films on silicon in high temperature water and moisture was investigated. Silicon nitride (Si_3N_4) and silicon dioxide (SiO_2) films were found to dissolve into hot water in the range 100〜30O℃, but the melting behavior of both films greatly depended on the pH and temperature of the water. Si_3N_4 films were proved to be less stable than Si0_2 films when pH was below 10, and local corrosion was observed, when Si_3N_4 films were exposed to high temperature moisture. Phosphosilicate glass (PSG) and aluminum oxide (A1_20_3) films were also evaluated by this autoclave method. PSG-covered devices were tested and evaluated also in this experiment and it was found that the dissolution of phosphorus oxide into water caused the corrosion of aluminum electrodes covered with PSG films. The reliability problems of various insulating films were investigated and discussed from a view point of semiconductor device application.
社団法人応用物理学会の論文
1977-05-05