Measurements of Modulation Transfer Function via Positive Photoresists and Their Cross Sectional Features
スポンサーリンク
概要
- 論文の詳細を見る
Novel methods of evaluation for the modulation transfer function of an optical system havebeen introduced by utilizing positive photoresists which are commonly used in integrated circuit technology. One of them is based upon the measurement of the intensity distribution in the photoresist and its Fourier transform. Another is the measurement of contrast transmission for a square wave chart. The thickness distribution in an exposed and developed positive photoresist is proved to be a reasonable measure of the intensity distribution in the image without using any photoelectrical devices.
- 社団法人応用物理学会の論文
- 1977-11-05
著者
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Matsumoto Yasuo
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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NAKASE Makoto
Toshiba VLSI Research Center
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Nakase Makoto
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
関連論文
- Characterization of a Newly Developed Contrast Enhancement Material for G-line Exposure
- Measurements of Modulation Transfer Function via Positive Photoresists and Their Cross Sectional Features