Thermal Behavior of Porous Silicon

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概要

• 論文の詳細を見る

• Thermal behavior of porous silicon formed by anodic reaction in 50 wt % hydrofluoric acid has been investigated. It was found that the porous silicon films (PSF) step height before and after heat treatment was a strong function of the apparent PSF density, atmosphere, temperature, and time. Particularly, the heat treatment in wet oxygen resulted in a change from PSF virtual volume increase to decrease with increasing oxidation time when the apparent PSF density is very small. In dry oxygen, PSF always caused a virtual volume increase. Three exothermic peaks, which were apparently caused by the oxidation reaction, were observed at approximately 300℃, 630℃, and 800℃. Si-Si bond in as-grown PSF was very unstable and the bond changed easily into Si-O bond as the oxidation temperature increased. Diffraction peaks, apparently caused by the formation of β-cristoballite, were observed at 1100℃ in dry oxygen.

• 社団法人応用物理学会の論文
• 1976-09-05

著者

• Arita Yoshinobu

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Kuranari Kunihiro

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• SUNOHARA Yoshio

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Sunohara Yoshio

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• A Mesa-Diode Formation by Oxidized Porous Silicon
• Thermal Behavior of Porous Silicon

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