A Comparative Study of the Photoconductivity, Photoelectret and Photodielectric Results in HgI_2 : CdS Binder Layers

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概要

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• An analysis of the PDE characteristics of HgI_2:CdS binder layers and its correlation with photoconductivity and photoelectret studies are presented. The observations are extended over the temperature range of 290K to 380K and illumination levels up to 2000 lux. The capacitance was found to increase as much as 200 % (for 380 K and 2000 lux at 80 Hz) obeying an exponential relation (ΔC∝e^<-0.2eV/KT>). The photocurrent also showed the temperature elevated process with an activation energy of 0.2 eV. A comparison of the results with the photoelectret charge, which decreases inversely with temperature, indicates a conduction electron denominated PDE in the FgI_2:CdS layers.

• 社団法人応用物理学会の論文
• 1976-05-05

著者

• Ahuja R.

  Department Of Physics Indian Institute Of Technology

• PILLAI P.

  Department of Physics, Indian Institute of Technology

• NATH Rabinder

  Department of Physics, Indian Institute of Technology

• Nath Rabinder

  Department Of Physics Indian Institute Of Technology

• Pillai P.

  Department Of Physics Indian Institute Of Technology

関連論文

• Theoretical and Experimental Studies on Gadolinium at Ultra High Pressure
• A Comparative Study of the Photoconductivity, Photoelectret and Photodielectric Results in HgI_2 : CdS Binder Layers
• On the Theory of Surface Charge Decay in Dielectrics

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