Crossed-Grid Dislocations in (001)-Oriented Silicon Crystals

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概要

• 論文の詳細を見る

• Crossed-grid dislocations in (001)-oriented silicon wafers, which are associated with bright spots in silicon vidicon images, are investigated by means of X-ray topography. They are found to have only Burgers vectors inclined to the wafer surface and to lie at a depth of moors than 30 μm with a fairly uniform dislocation density. It is speculated that they originate from some stress-concentrated points at the oxidizing surfaces and grow by glide and cross slip to relieve elastic strain caused by the attachment of an oxide film.

• 社団法人応用物理学会の論文
• 1976-01-05

著者

• MATSUI Junji

  Nippon Electric Co., Limited, Central Research Laboratories

• Matsui Junji

  Nippon Electric Company Lid. Central Research Laboratories

• SHIRAKI Hiromitsu

  Nippon Electric Company, Lid., Central Research Laboratories

• Shiraki Hiromitsu

  Nippon Electric Co. Ltd. Central Research Laboratories

関連論文

• Rapid Degradation in Double-Heterostructure Lasers. : II. Semiquantitative Analyses on the Propagation of Dark Line Defects
• Crossed-Grid Dislocations in (001)-Oriented Silicon Crystals
• Low Frequency Current Oscillation in Solution Grown p-n Junction in Gallium Phosphide

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