Study of Defects Introduced by Ion Implantation in Diamond

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概要

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• Natural type IIa diamonds have been implanted with 70 keV carbon, nitrogen and boron ions. The behaviour of the defects introduced is monitored using electron paramagnetic resonance, absorption, luminescence and Raman scattering measurements. We first describe and discuss the applicability of these techniques. We then present results concerning the introduction rate of the defects and their annealing; these results are briefly discussed.

• 社団法人応用物理学会の論文
• 1975-04-05

著者

• Bourgoin Jacques

  Groupe De Physique Des Solides De L'e.n.s. Universite Paris Vii

• MORHANGE Jean-Francois

  Laboratoire de Physique des Solides, Universite Paris VI

• BESERMAN Robert

  Laboratoire de Physique des Solides, Universite Paris VI

• Beserman Robert

  Laboratoire De Physique Des Solides Universite Paris Vi

• Morhange Jean-francois

  Laboratoire De Physique Des Solides Universite Paris Vi

関連論文

• Study of Defects Introduced by Ion Implantation in Diamond

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