Range and Standard Deviation of Ion-Implanted Phosphorus in Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1974-07-05
著者
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Okabayashi Hidekazu
Central Research Laboratories Nippon Electric Co. Ltd.
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Okabayashi Hidekazu
Central Research Laboratories Nippon Electric Company Ltd.
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Shinoda Daizaburo
Central Research Laboratories Nippon Electric Co. Ltd.
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Shinoda Daizaburo
Central Research Laboratories Nippon Electric Company Ltd.
関連論文
- Ion-Bombardment-Induced Improvement of Photoresist Mask Properties for RF Sputter-Etching
- Vapor Growth of InAs
- Magnetic Properties of Silicides of Iron Group Transition Elements
- Range and Standard Deviation of Ion-Implanted Phosphorus in Silicon