ZnO Films Formed by Oxidation of ZnSe Films
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概要
- 論文の詳細を見る
A ZnO film is formed by oxidizing a crystalline ZnSe film by vacuum deposition. The resistivity of the ZnO film is increased by doping Al or Li and, at the same time, the orientation of its C-axis can be controlled as desired. ZnO films prepared by this method can be used in ultrasonic transducers in the VHF and UHF ranges, but their piezoelectric constants are only one tenth of the constant of a ZnO crystal.
- 社団法人応用物理学会の論文
- 1974-06-05
著者
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Ohnishi Masaru
Central Research Laboratory Mitsubishi Electric Corporation
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Yoshizawa Michio
Central Research Laboratory Mitsubishi Electric Corporation
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TOMURA Kouichi
Central Resarch Laboratory, Mitsubishi Electric Corporation
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Tomura Kouichi
Central Resarch Laboratory Mitsubishi Electric Corporation
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Tomura Kouichi
Central Research Laboratory Mitsubishi Electric Corporation
関連論文
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- Some Crystal Properties of Phosphorus Doped CdS Single Crystals
- Drift Mobility of Holes in Evaporated Se -Te Films
- Thermo-Crystallication of Amorphous Se Films
- Thermodynamic Properties of Amorphous Ge-Se Alloys
- Field Dependence of Quantum Efficiency in CdS-Resin Layers Due to Injective Contact and Blocking Contact
- Photoconductivity of CdS : Li Single Crystals
- ZnO Films Formed by Oxidation of ZnSe Films
- Anomalous Photosensitivity of PET-CdS Photosensitive Plate in Electrophotographic Process