An Improvement in Spectral Response of Silicon Vidicon by a CVD SiO_2 Film

概要

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In order to improve the spectral response of a silicon vidicon, a chemically vapor-deposited (CVD) SiO_2 film is applied on the light-receiving surface. It is found that the CVD SiO_2 film contributes as effectively to the improvement of the spectral vesponse, especially in the visible region, as the phosphorous n^+ layer. The surface recombination velocity of minority carriers at the deposited surface is of the order of 10^3 cm/sec, the silicon surface potential of the SiSiO_2 interface is 0.20 to O.25V (energy band bent downward), and the depth of the equivalently accumulated n^+ layer is about 0.3 μm. Though some degrading of this effect is recognized as time elapses, the CVD SiO_2 film will also be available to a conventional pn silicon vidicon, if measures against degrading could be obtained. Antireflection effects can also be expected by use of the CVD SiO_2 film.
社団法人応用物理学会の論文
1973-01-05