Dielectric Properties of Y_2O_3 Thin Films Prepared by Vacuum Evaporation

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概要

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• The dielectric films formed by evaporating Y_2O_3 in vacuum have been identified with sesquioxide by infrared transmission, electron and X-ray diffraction studies. Thin film capacitors using this dielectric material exhibit excellent electric stability in high termperature and can be reproduced easily in a closed-cycle process with electron beam equipment. The dielectric constant is 13 and dissipation factor, tanδ, is 0.003 at room temperature with a breakdown field strength of 3×10^6V/cm. The temperature coefficient of Y_2O_3 film capacitor is about 300ppm/℃.

• 社団法人応用物理学会の論文
• 1970-07-05

著者

• Tsutsumi Tadashi

  Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.

関連論文

• An Experimental Si Vidicon Target without Mosaic Structure
• Dielectric Properties of Y_2O_3 Thin Films Prepared by Vacuum Evaporation

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