Resistivity and Temperature Coeffcient of Thin Metal Films with Rough Surface

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概要

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• The thickness dependence of resistivity and its temperature coefficient of thin metal films has been studied. A theory is proposed to include, the surface roughness in determining the film resistivity, in addition to the reduced mean free path to conduction electrons. The ratio of the roughness to the mean free path, h/λ, is introduced as a convenient parameter. The thickness dependence of the resistivity predicted by the present theory agrees with the well known Fuchs-Sondheimer theory if h/λ=0. If h/λ>0, the discrepancy between the two theories increases with the decrease in film thickness. Satisfactory agreement between the theoretical and experimental results can be obtained by adjusting the value of h/λ.

• 社団法人応用物理学会の論文
• 1970-11-05

著者

• Namba Yoshikatsu

  Department Of Electrical Engineering Faculty Of Technology Tokyo Noko University

• Namba Yoshikatsu

  Department Of Electrical Engineering Faculty Of Technology Tokyo University Of Agriculture And Techn

関連論文

• Epitaxy of Ag on NaCl Deposited by Ion Deposition
• Resistivity and Temperature Coeffcient of Thin Metal Films with Rough Surface
• Measurements of Temperature of Thin Metal Films during Vapor Deposition

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