Build-up Phenomenon of Tungsten Cathode for FEM

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概要

• 論文の詳細を見る

• The activation energy for migration of surface atoms is measured for the (111) or (130) plane of clean tungsten tip and for the (111) plane in the presence of oxygen. Values of the activation energy for (111) and (130) plane of the clean tungsten tip are 2.36±0.05 eV/atom and 2.l0±0.05 eV/atom, respectively. When the oxygen pressure is relatively low (about 10^<-9> torr), the build-up phenomenon on the (111) planes occurred in twice with the lapse of time and the values of activation energy are 0.72±0.02 eV/atom and 1.10±0.05 eV/atom in each case. When the oxygen pressure is about 10^<-8> torr, the activation energy is 0.9O±0.05 eV/atom. The decrease of activation energy due to polarization of an atom on clean surface by electrostatic field is about 0.4 eV/atom for the (111) or (130) plane, but when the oxygen is on the surface, the decrease for the (111) plane is only 0.1 eV/atom.

• 社団法人応用物理学会の論文
• 1971-09-05

著者

• Sugata Eizi

  Faculty Of Engineering Osaka University

• MUN Dopyong

  Faculty of Engineering, Osaka University

• Mun Dopyong

  Faculty Of Engineering Osaka University

関連論文

• Field Desorption of Cesium from a Cesium Covered Oxygenated Tungsten Surface
• Desorption and Migration of Cesium Adsorbed on Tungsten in the Presense of an Electric Field
• Build-up Phenomenon of Tungsten Cathode for FEM
• An Adsorption Study of O_2 and H_2 on Mo by Field Emission Retarding Potential Analyser

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