1.UHF帯ECRプラズマ(<講座>プロセス用の新しい高密度プラズマの生成と診断I)
スポンサーリンク
概要
- 論文の詳細を見る
Characteristics of Ultra High Frequency-band Electron Cycrotron Resonance (UHF-band ECR) plasma for silicon-dioxide (SiO_2) etching have been investigated, with a focus on the effects of source frequency and wafer biasing on the composition of active species in C_4F_8/Ar plasma. The results show that the plasma characteristics at 500 MHz and 915 MHz are different in terms of electron energy and plasma structure, thereby affecting the composition of the active species in C_4F_8/Ar plasma. It was also shown that surface interactions, such as those reactions occuring on a resist surface, are significant in considering the plasma composition optimal for SiO_2 etching in Ultra-Large Scale Integrated (ULSI) circuit fabrication. The directions for plasma control are discussed in terms of gas flow, electron density, electron energy, and plasma structure, to explain how to adjust the apparatus parameters and chemical parameters to a condition for the selective etching of SiO_2.
- 社団法人プラズマ・核融合学会の論文
- 1997-12-25