TECHNOLOGIES AND DEVELOPMENT OF FULL COLOR FIELD EMISSION DISPLAY DEVICES
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概要
- 論文の詳細を見る
We report the development of 4"full color FED devices with the reliability analysis. Each pixel is composed of 4900 tips, which results in 80 million tips for 4"color diagonal panel. The hole pattern of the chromium gate is maintained at 1.1±0.1μm. The low voltage phosphors such as Y_2O_2S : Eu, ZnS : (Ag, Cl, Al), ZnS : (Cu, Al, I) for red, blue and green with special surface treatments are developed and their related screening technologies are studied with electrical analysis. The fully moving images are displayed at the anode bias of 250 volts. The emission current profile of the field emission for the color anode is well investigated with the color anode patterning. We analyze the relationship between the electron emission profile on the full panel. The brightness at white color mode of color FED is approximately 80cd/m^2.
- 社団法人映像情報メディア学会の論文
- 1997-02-14
著者
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Kim J.m.
The National Creative Research Initiatives Center For Electron Emission Source Samsung Advanced Inst
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Kang J.H.
The National Creative Research Initiatives Center for Electron Emission Source Samsung Advanced Inst
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Park N.S.
Display Lab., Samsung Advanced Institute of Technology
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Jung J.E.
The National Creative Research Initiatives Center for Electron Emission Source Samsung Advanced Inst
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Park N.s.
Display Lab. Samsung Advanced Institute Of Technology
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KIM J.M.
Display Lab, Samsung Advanced Institute of Technology
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Choi J.h.
Samsung Advanced Institute Of Technology
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Kim J.m.
Display Lab Samsung Advanced Institute Of Technology
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Hong J.P.
Display Materials Lab, Materials sector Samsung Advanced Institute of Technology
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Kim J.W.
Display Materials Lab, Materials sector Samsung Advanced Institute of Technology
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Choi J.H.
Display Materials Lab, Materials sector Samsung Advanced Institute of Technology
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Kang J.H.
Display Materials Lab, Materials sector Samsung Advanced Institute of Technology
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Jang J.E.
Display Materials Lab, Materials sector Samsung Advanced Institute of Technology
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Ryu Y.S.
Display Materials Lab, Materials sector Samsung Advanced Institute of Technology
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You Y.C.
Display Materials Lab, Materials sector Samsung Advanced Institute of Technology
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You Y.c.
Display Materials Lab Materials Sector Samsung Advanced Institute Of Technology
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Ryu Y.s.
Display Materials Lab Materials Sector Samsung Advanced Institute Of Technology
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Hong J.p.
Display Materials Lab Materials Sector Samsung Advanced Institute Of Technology
関連論文
- 28pYX-7 15 full color carbon nanotube FED with triode structure
- 22.2:The First 9-in.Carbon-Nanotube-Based FEDs for Large-Area and Color Applications(2.主なFED関連発表の内容)(Report on 2000 SID International Symposium)
- L2.1: Late-News Paper : A 4.5-in. Fully Sealed Carbon Nanotube-Based Field-Emission Flat-Panel Display(2.主なFED関連発表内容)(Report on 1999 SID International Symposium)
- Structural Investigation fo Carbon Nanotubes Grown by Plasma-Enhanced Hot Filament Chemical Vapor Deposition
- P-38:FED Devices Containing a Novel Graphite Cathode Prepared by a Screen Printing Process(2.主なFED関連発表の内容)(Report on 2000 SID International Symposium)
- TECHNOLOGIES AND DEVELOPMENT OF FULL COLOR FIELD EMISSION DISPLAY DEVICES
- 28.2:Formation of Nano-Structured Molybdenum Microtips by Reactive Ion Etching of Polymide-Coated Field-Emitter Arrays 11:00(2.主なFED関連発表の内容)(Report on 2000 SID International Symposium)
- High Voltage Operated 5.2 "Full Color Field Emission Display Devices with a Focus Electrode(2.3 FED関連)(2.報告概要)(Report on the 19th International Display Research Conference(Euro Display '99))
- 6.5 LaF3 Coated MgO Protecting Layer in AC-Plasma Display Panels(6.THIN FILM MATERIALS AND DEPOSITION)(1999 Display Manufacturing Technology Conference Report)