〓〓〓〓a-Si:H TFTs特性的影〓
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概要
- 論文の詳細を見る
A compensation layer was inserted in between active layer a-Si : H and passivation layer a-SiNx of a-Si : H TFTs in order to improve the quality of the interface. The dependence of the performances of the a-Si : H TFTs with the rf power of the hydrogen plasma treatment were experimentally investigated. The characteristics of the a-Si : H TFTs is improved by using an optimum rf power and introducing a special buffer layer.
- 社団法人映像情報メディア学会の論文
- 1997-02-13
著者
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Ding Hui
Department Of Solid State Electronics Huazhong University Ofscience And Technology
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Ding Hui
Department Of Microbiology State Key Laboratory Of Medical Immunology Second Military Medical Univer
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Wang Changan
School Of Resource Processing And Bioengineering Central South University
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Wang Changan
Department Of Solid State Electronics Huazhong University Ofscience And Technology
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Xu Zhongyang
Department Of Solid State Electronics Huazhong University Ofscience And Technology
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Zhang S
大電 機能材料開発室
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Zhang Shaoqiang
Department of Solid State Electronics, Huazhong University of Science and Technology
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Zou Xuecheng
Department of Solid State Electronics, Huazhong University of Science and Technology
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Zhou Xuemei
Department of Solid State Electronics, Huazhong University of Science and Technology
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Zhao Bofang
Department of Solid State Electronics, Huazhong University of Science and Technology
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Dai Yongbin
Department of Solid State Electronics, Huazhong University of Science and Technology
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Wan Xinheng
Department of Solid State Electronics, Huazhong University of Science and Technology
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周 雪梅
〓中理工大学 固体〓子学系
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Zhao Bofang
Department Of Solid State Electronics Huazhong University Ofscience And Technology
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Wan X
Department Of Solid State Electronics Huazhong University Ofscience And Technology
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Zou Xuecheng
Department Of Solid State Electronics Huazhong University Ofscience And Technology
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Dai Yongbin
Department Of Solid State Electronics Huazhong University Ofscience And Technology
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〓 少〓
Department of Solid State Electronics, Huazhong University of Science and Technology
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徐 重〓
Department of Solid State Electronics, Huazhong University of Science and Technology
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〓 雪城
Department of Solid State Electronics, Huazhong University of Science and Technology
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王 〓安
Department of Solid State Electronics, Huazhong University of Science and Technology
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周 雪梅
Department of Solid State Electronics, Huazhong University of Science and Technology
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〓 伯芳
Department of Solid State Electronics, Huazhong University of Science and Technology
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戴 永兵
Department of Solid State Electronics, Huazhong University of Science and Technology
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万 新恒
Department of Solid State Electronics, Huazhong University of Science and Technology
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丁 〓
Department of Solid State Electronics, Huazhong University of Science and Technology
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- 〓〓〓〓a-Si:H TFTs特性的影〓
- 〓〓〓〓a-Si:H TFTs特性的影〓