CCDイメージセンサ用BCD-高性能非破壊電荷検出機構

概要

論文の詳細を見る
This article describes the theory of operation and characterization results of a new charge detection amplifier, which detects charge that moves in the bulk of a silicon CCD channel. The charge detection is nondestructive and, therefore, kTC noise free. The new detector is suitable for a very high speed and a low noise operation needed in high-resolution CCD image sensors. A simple gradual channel transistor approximation is used to derive the first order device model which then predicts the charge conversion sensitivity, linearity, and noise. The derived theoretical results are compared with detail measurements that include the measurement of conversion gain, linearity, reset feed through, noise, and hot carrier effects. Finally, from the analysis and from the measurement results, it is concluded that the BCD(Bulk Charge Detection)concept is superior to today's state-of-the-art FD(Floating Diffusion)charge detection amplifiers in high-speed applications.
2000-03-24