P1.13:EL DEVICES USING Ga_2O_3 PHOSPHOR THIN FILMS PREPARED BY DIP-COATING(Session P1:EL Poster Session)(Report on 5th International Display Phosphor Conference)
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概要
- 論文の詳細を見る
- 一般社団法人映像情報メディア学会の論文
- 2000-02-25
著者
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Minami T.
Kanazawa Institute of Technology
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Shirai T.
Kanazawa Institute of Technology
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Miyata T.
Kanazawa Institute of Technology
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Nkatani T.
Kanazawa Institute of Technology
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- Inorganic EL Phosphors:Mn-Activated(Al_2O_3-Ga_2O_3)Multicomponent Oxide Phosphor TFEL Devices(2. EL'00概要報告)
- P.22 : EL Devices Using SnO_2 : Eu Thin Films Prepared by Physical and Chemical Deposition Methods(2.2 Session 5 : EL AND OLEDs)(Report on the 20th International Display Research Conference)
- P.21 : Ga_2O_3 : Mn Thin-Film EL Devices Prepared by Chemical Deposition Methods(2.2 Session 5 : EL AND OLEDs)(Report on the 20th International Display Research Conference)
- P1.13:EL DEVICES USING Ga_2O_3 PHOSPHOR THIN FILMS PREPARED BY DIP-COATING(Session P1:EL Poster Session)(Report on 5th International Display Phosphor Conference)
- Inorganic EL Devices:Mn-Activated Y_2O_3-Based Multicomponent Oxide Phosphors for TFEL Devices(1. 6th STDP概要報告)
- New High Luminance Thin-Film Electroluminescent Devices Using Mn-Activated Gallate Phosphors(2.2 無機EL関連)(2.報告概要)(Report on the 19th International Display Research Conference(Euro Display '99))