A BCE-type α-Si TFT with an Island Metal Masking Structure (第5回日韓台中情報ディスプレイ合同研究会(ASID '99)) -- (TFT Technology for AM LCD)

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概要

• 論文の詳細を見る

• A new back channel etched hydrogenated thin film transistor (TFT) device with an island metal masking structure has been proposed and fabricated. The TFT structure contained a continue layer deposition process of SiNx/a-Si/n+a-Si/Metal, and finally resulted in an additional metal layer between source/drain metals and island. The channel metal was etched in the S/D metal mask patterning simultaneously. Results showed the newly designed TFT device exhibiting some characteristics: (i) good S/D metal/n+a-Si contact; (ii) prevention of plasma damage during processing especially for oxygen plasma ashing and (iii) without additional mask. These advantages will be helpful for a wider range of process window in large area mass production a-Si TFT fabrications.

• 社団法人電子情報通信学会の論文
• 1999-03-19

著者

• Chen J.h.

  Electronics Research And Service Organization Industrial Technology Research Institute

• CHEN Y.

  Electronics Research & Service Organization, Industrial Technology Research Institude

• Chen J.

  Electronics Research and Service Organization, Industrial Technology Research Institute

• Huang T.

  Electronics Research and Service Organization, Industrial Technology Research Institute

関連論文

• High temperature magnetoresistance study of a magnetic tunnel junction
• A BCE-type α-Si TFT with an Island Metal Masking Structure (第5回日韓台中情報ディスプレイ合同研究会(ASID '99)) -- (TFT Technology for AM LCD)

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