6.4 MoW Gate Line Improvement with Kr Gas Sputtering(6.THIN FILM MATERIALS AND DEPOSITION)(1999 Display Manufacturing Technology Conference Report)

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概要

• 論文の詳細を見る
• 社団法人映像情報メディア学会の論文
• 1999-03-12

著者

• SUZUKI K.

  Toshiba Corporation

• Atsuta M.

  Toshiba Materials And Devices Research Lab.

• Ikeda M.

  Toshiba Materials and Devices Research Lab.

• Hara Y.

  Toshiba Materials and Devices Research Lab.

• Tsuji Y.

  Toshiba Materials and Devices Research Lab.

• Oka T.

  Toshiba Materials and Devices Research Lab.

• Takemura M.

  Toshiba Materials and Devices Research Lab.

• Tsuji H.

  Toshiba Materials and Devices Research Lab.

関連論文

• On the determination of the multi-temperature SF_6 plasma composition
• A Kinetic Radiation Model for a Decaying SF_6/N_2 Arc Plasma
• Dielectric breakdown in Gas Circuit Breakers
• 6.4 MoW Gate Line Improvement with Kr Gas Sputtering(6.THIN FILM MATERIALS AND DEPOSITION)(1999 Display Manufacturing Technology Conference Report)
• 4.2: A Low-Power Image-Memory AMLCD Using Ferroelectric Film with Gray-Scale Capability(Session 4 : Novel AMLCDs)(発表概要)(Report on 1999 SID International Symposium)

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