Crystallization of a-Si:H film for the low temperature p-Si TFT : Crystallization of a-Si:H film deposited on the seed like μ-Si and p-Si below 600℃
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概要
- 論文の詳細を見る
The seed assisted crystallization process has been studied and compared with the conventional SPC process. The micro crystalline and the poly crystalline seed layer were prepared as thickness of 100Å- 500Å and a-Si:H was deposited on the seed layer. They were crystallized by furnace annealing at N, atmosphere. TEM micrographs and Raman Spectra were used for analyzing the crystalline quality. It suggested a new possibility of the low temperature crystallization process.
- 社団法人映像情報メディア学会の論文
- 1992-10-20
著者
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Shin J.e.
Materials And Devices Research Center Samsung Advanced Institute Of Technology
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Mah S.b.
Materials And Devices Research Center Samsung Advanced Institute Of Technology
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Lee J.W.
Materials and Devices Research Center Samsung Advanced Institute of Technology
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Jung B.H.
Materials and Devices Research Center Samsung Advanced Institute of Technology
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Chou K.S.
Materials and Devices Research Center Samsung Advanced Institute of Technology