Contact Series Resistance in Hydrogenated Amorphous Silicon Thin Film Transistor

概要

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The effective channel length and series contact resistance were extracted for various thin film transistors. The series contact resistance was decreased with source-drain voltage, and the difference between mask channel length and effective channel length was decreased with the source-drain voltage. For small source-drain voltages, both of them came to be constant. Contact-series resistances were measured for various shapes of thin film transistors to see geometrical effect.
社団法人映像情報メディア学会の論文
1992-10-20