Si撮像素子における不純物と結晶欠陥 : Si中の点欠陥の挙動に注目して : 情報入力
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概要
- 論文の詳細を見る
Si UlSI technology requires an unprecedented degree of crystal perfection of Si. Gettering, commonly used to remove impurities and defects from active device regions has received increasing interested for maintaining crystal perfection, Gettering is now in a new stage of research for the mega-bit age, Methods and mechanisms of Gettering are discussed. The role of point defects in silicon on gettering is much emphasized.
- 社団法人映像情報メディア学会の論文
- 1991-12-20