ICカード用静電気サージ防護素子
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概要
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This paper describes the protection method of IC card against electrostatic discharge. The protective device consists of five silicon avalanche diodes fabricated in a planar structure of 3×1.5×0.25mm^3. The IC card connected in parallel with this device was not degraded by exposure to electrostatic discharge of 15.5 kilovolts.