アモルファスシリコンフォトダイオードの光電流増倍を用いた赤外光受光
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概要
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It is experimentally demonstrated that an a-Si : H photodiode with ninip stacked structure (reach-through structure) can detect infrared light of 1.31 μm and 1.55 μm. A maximum gain-quantum efficiency product of 0.58 is obtained at 1.31 μm. This value of gain-quantum efficiency product is comparable to the quantum efficiency of a non-gain-enhanced a-Si : H pin photodiode at visible wavelengths. The response speed of the photodiode is slow, on the order of ms. An insertion of a carrier-injection-blocking layer between a-Si : H and the electrode improves the response speed, but decreses the gain-quantum efficiency product.
- 社団法人映像情報メディア学会の論文
- 1995-12-15