オフセット構造Poly-Si TFTの光リーク電流

概要

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We have investigated a photo-leakage-current generation mechanism and tried to reduce it. It has been found that the I_<photo> of an offset poly-Si TFT is mainly generated in an offset region. By optimizing an offset length (about 0.5 μm), we have realized an offset poly-Si TFT with a high mobility (165 cm^2N-s) and a low I_<photo>(2.4×10^-11A at 1.4×10^5 lx). In order to control the offset length, lateral-etching method for the fabrication of a self-allgned offset structure, which we proposed previously, is very useful.
社団法人映像情報メディア学会の論文
1995-05-11