Transfer Mold Gated Field Emitter Arrays
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概要
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Gated field emitter arrays fabricated by Transfer Mold technique and field emission properties are described. Because of the sharpening effect on the tips by the Si single crystal mold surface oxidation, emitter tip radii are as Small as less than 10 nm. The Fowler-Nordheim Plots of the Mo gated emitter array became a straight line and l-V characteristics indicated rectification. Transfer Mold technique is suitable for fabricating sharp, uniform and reproducible gated emitter arrays, and for selecting appropriate emitter materials.
- 社団法人映像情報メディア学会の論文
- 1994-10-27
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