ダブルゲート構造TFTを用いた内部増幅型フォトセンサの開発及び対角1インチ2次元密着センサの試作 : 情報入力
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The internal amplification photo-sensor using double-gate structure TFT(DG SENSOR) has been developed. Its top-gate acts as a photo-sensing gate and its bottom-gate acts as a pixel select gate. Photo-sense mechanism is the effective gate modulation. The accumulation of photo-excited holes in an a-Si region shields the negative electric field of the top-gate. 1-inch 2-dimensional 64dots/mm^2 contact sensor has been fabricated using these DC SENSORs. Each pixel consists of 1 transistor with 4 electrodes. It is fabricated by a low temperature process as same as an a-Si TFT display panel. DG SENSOR is applicable to large-area 2-D contact sensors and LSIs stacked over a million pixels with high sensitivity.
- 社団法人映像情報メディア学会の論文
- 1994-01-21
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関連論文
- 4)ダブルゲート構造Tnを用いた内部増幅型フォトセンサの開発及び対角1インチ2次元密着センサの試作(情報入力研究会)
- ダブルゲート構造TFTを用いた内部増幅型フォトセンサの開発及び対角1インチ2次元密着センサの試作 : 情報入力