Structures and Properties of SiC Nanowires : A Molecular Dynamic Study

概要

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The study of condensed systems with nanometer dimensions is of scientific interest and these materials also have potential applications in electronics. Silicon Carbide (SiC) is a wide band gap semiconductor able to operate at high temperatures, high powers, high frequencies, and in harsh environment. The elasticity and strength of an individual SiC nanowire are considerably greater than those of bulk SiC. The outstanding mechanical properties of SiC nanowires make this material a promising candidate for the reinforcing phase in ceramic, metal and polymer matrix composites. In this paper, we have investigated that the structures and the properties of SiC nanowires using the molecular dynamic simulation method. This simulation is based on a well-tested tersoff potential for SiC. As a result of study, we have known that the structures of the SiC grown along [111] and [100] directions are more stable than the others.
社団法人電子情報通信学会の論文
2002-06-26