MD Analyses of Surface Reaction and Adsorbed Free Particle Behavior in LP-CVD Silicon Wafer Processing

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概要

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• By using the molecular dynamics method(MD)and computer graphics(CG), the surface processing mechanism of SiH_2→Si+2H in LP-CVD silicon wafer fabrication is analyzed, in which we introduce a chemical reaction model consisting of the activating energy and attack angle between SiH_2 gaseous molecules and Si atom monocrystalline. The atom surface adsorption and inelastic collision are discussed considering energy exchange between the particles and surface. Moreover, the potential state and behavior of hydrogen atom adsorbed as a free particle are also calculated and discussed. The relevant potential surface of H free particle in the Si crystal lattice is found to be useful to understand its potential state and behavior.

• 一般社団法人日本機械学会の論文
• 1999-05-15

著者

• Kato Soichiro

  Ishikawajima Harima Heavy Industries Co. Ltd. Fundamental Technology Department

• Kato Seizo

  Faculty of Engineering, Mie University

• HU Hangxiang

  Hayashiguchi MFG Co.Ltd.

• Kato S

  Energy System Design Laboratory Department Of Mechanical Engineering Mie University

• Kato Seizo

  Faculty Of Engineering Mie University

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