A 196-mm^2, 2-Gb DDR2 SDRAM using an 80-nm Triple Metal Technology

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概要

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• A 2Gb DDR2 SDRAM has been fabricated with 80nm Triple Metal DRAM process. The wrapped chip architecture has been introduced to reduce the chip size and the bank skews. NMOS precharge IO scheme and hierarchical IO structure are used for high speed operation. The chip size is small enough to fit the standard package and the data rate is over 800Mbps at 1.8V

• 2005-04-07

著者

• KOOK Jeonghoon

  Memory Division, Samsung Electronics

• KYUNG Kyehyun

  Memory Division, Samsung Electronics

• KIM Chiwook

  Memory Division, Samsung Electronics

• LEE Jaeyoung

  Memory Division, Samsung Electronics

• Kim Chiwook

  Memory Division Samsung Electronics

• Lee Jaeyoung

  Memory Division Samsung Electronics

• Kyung Kyehyun

  Memory Division Samsung Electronics

• Kook Jeonghoon

  Memory Division Samsung Electronics

関連論文

• A 196-mm^2, 2-Gb DDR2 SDRAM using an 80-nm Triple Metal Technology
• A 196-mm^2, 2-Gb DDR2 SDRAM using an 80-nm Triple Metal Technology

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