Effect of SOG(Spin on Glass)on formation of PbZr_<0.52>Ti_<0.48>O_3 for Metal-Ferroelectric-Insulator-Semiconductor(MFIS)structure

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概要

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• We proposed SOG as the buffer layer for MFIS structure and investigated the effect of SOG on formation of PZT. The formed PZT on SOG had a smooth surface morphology and the perovskite phase though the annealing temperature of PZT was low as the 450℃ and the crystalline property of SOG was amorphous.The electric characteristics of MFIS structure with Pt/PZT/SOG/Si were obtained the memory window in the capacitance-voltage curve was about 2.5V and the leakage current density was measured below 5×10^&ly:-7>A/cm^2 at 15V(500kV/cm).And the P-E characteristics of PZT/SOG capacitors were so good.P_r and E_c were 26μC/cm^2 and 60kV/cm, respectively.

• 社団法人電子情報通信学会の論文
• 1998-07-24

著者

• Kim Chul-ju

  Dept.of Electronic Engineering The University Of Seoul

• Choi Yeon-Hwa

  Dept.of Electronic Engineering, The University of Seoul

• Choi Yeon-hwa

  Dept.of Electronic Engineering The University Of Seoul

関連論文

• Effect of SOG(Spin on Glass)on formation of PbZr_0.52Ti_0.48O_3 for Metal-Ferroelectric-Insulator-Semiconductor(MFIS) structure
• Effect of SOG(Spin on Glass)on formation of PbZr_Ti_O_3 for Metal-Ferroelectric-Insulator-Semiconductor(MFIS)structure

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