A Study on Junction Profile near Si/Oxide Interface due to Transient Enhanced Diffusion Effect in MOSEFT

概要

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Source/drain junction profile of MOSFET with trench isolation was studied by using process simulation with TED model.It was observed that the junction depth near the Si/oxide interface is much shallower than that of the bulk region.The origin of the shallow junction formation near the interface is related to TED caused by source/drain implantation damage.The shallow junction was formed due to the counter doping by B pile-up in NMOS but it was formed due to the retardation of B diffusion and B segregation in PMOS.The junction leakage for MOSEFT with N_2O annealed interface was reduced and this result was well determined by simulation result.
社団法人電子情報通信学会の論文
1998-07-24