ED2000-74 / SDM2000-74 PHEMT Super Low Noise MMIC Amplifier for 5.8 GHz HIPER LAN Applications

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概要

• 論文の詳細を見る

• An MMIC low noise amplifier of noise figure 0.79 dB and gain of 16 dB at 5.8 GHz is designed and fabricated using 0.25 μm gate length AlGaAs / InGaAs / GaAs pseudomorphic high electron mobility transistors to meet the noise requirement for high data rate HIPER LAN applications. The input stage was designed to provide a simultaneous noise and impedance match by adjusting both gate width and series feedback inductance at the source, and the inter-stage and the output port were matched to 50 Ω. The on-chip metched LNA shows less than -10dB return loss. The MMIC LNA consumes 41mA from a 3 Volt supply, and the area of the chip is 1.5mm × 1.5mm. We believe that the 0.79dB noise figure at 5.8 GHz of this work is the best result reported to date from MMIC LNAs.

• 社団法人電子情報通信学会の論文
• 2000-06-22

著者

• Park C.s.

  Information And Communications University

• Lee Y

  Information And Communications University

• Choi B.G.

  Information and communications University

• Lee Y.S.

  Information and communications University

• Yoon K.S.

  Department of Electronics and Information Engineering, Korea University

• Yoon K.s.

  Department Of Electronics And Information Engineering Korea University

関連論文

• ED2000-74 / SDM2000-74 PHEMT Super Low Noise MMIC Amplifier for 5.8 GHz HIPER LAN Applications
• ED2000-62 / SDM2000-62 Extraction of GaAs/InGaP HBT Small-Signal Equivalent Circuit Based on a Genetic Algorithm
• ED2000-74 / SDM2000-74 PHEMT Super Low Noise MMIC Amplifier for 5.8 GHz HIPER LAN Applications
• The Magnetism and Electronic Structures of Rh Monolayer

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