ED2000-48 / SDM2000-48 Sub 4-nm Polyoxide Using ECR (Electron Cyclotron Resonance) N_2O Plasma Oxidation

概要

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We have developed a process of growing ultrathin oxide on polysilicon layer by using Electron Cyclotron Resonance (ECR) N_2O plasma. Sub 4-nm thick polyoxide on n+ and p+ polysilicon layer were grown and characterized. These oxides had larger breakdown fields, smaller electron trapping characteristics and larger Q_<BD> value than that of thermal polyoxides. Smaller electron trapping characteristics of ECR N_2O plasma polyoxides than that of thermal polyoxides at positive bias resulted from the smaller roughness of polysilicon surface after oxidation processes. Under the negative constant current stress of 20 mA / cm^2, Q_<BD> value of up to 86 C / cm^2 for polyoxide on n+ polysilicon and up to 80 C / cm^2 for polyoxide on p+ polysilicon were obtained, respectively. These ultrathin plasma polyoxides would be good candidates for future inter-poly dielectrics and the gate oxides for thin film transistors.
社団法人電子情報通信学会の論文
2000-06-21