Characterization of Processing Environments for Ultra Clean Wafer Manufacturing

概要

論文の詳細を見る
Several examples are presented to illustrate the use of three key principles of ultraclean technology(UCT)-ultraclean processing environment,ultraclean wafer surface and perfect process parameter control - for ULSI wafer processing Manufacturing protocols of UHP gas distribution systems for a new submicron semiconductor fab in the United States are first highlighted.Next is a case study that shows the process induced moisture in a rapid thermal oxidation(RTO)reactor was actually generated from reacting hydrogen impurity in silicon wafer with oxygen,not′ from the UHP g as impurities.Two other examples are then presented to show the usefulness of Process Tool Analysis System(PTAS)including an in- situ quadrupole mass spectrometer to improve the operating procedures to reduce cross contamination ina multi-chamber etch tool and process fluctuation in a nitride process.Finally,an optimized plasma cleaning process using diluted NF_3 is shown to increase SiO_2 and Si_3N_4 etch rates at reduced NH_3 concentration and pressure.
社団法人電子情報通信学会の論文
1993-08-24