A 5V-ONLY 16M FLASH MEMORY USING A CONTACTLESS ARRAY OF SEGMENTED SOURCE-SIDE INJECTION CELLS

概要

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The source side injection technology coupled with a modified virtual ground contactless array architecture is effective in addressing high density FLASH requirements. We describe a single supply 16Mbit chip developed in a 0.7μm triple-poly double metal process using a 3.36μm^2 cell. The design challenge is to implement all the necessary array interface circuitry while maintaining a high array-to-chip area efficiency. This implementation requires unique decoding circuitry on the bitlines and cell control gates.
社団法人電子情報通信学会の論文
1995-07-29