32Mb NAND Flash Memory for Mass Storage Applications

概要

論文の詳細を見る
A 32Mb NAND flash memory that operates on a single 3. 3V supply has been successfully developed on 0.5μm CMOS Process. Die size is minimized to 94.9mm^2 with an effective cell size of 1.6μm^2. Overhead for generating and controlling high voltage is substantially relaxed through self-boosted program-and-erase inhibit. Incremental stepping high voltage control improves not only device performance and reliability, but also the yield of the device. Overall design focused on low cost and manufacturability achieves a low dolor-per-mega-byte cost below ten for the first time.
社団法人電子情報通信学会の論文
1995-07-29