Oxynitrided Thin Gate Dielectrics for Reliability Improvement

概要

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The effect of low pressure N_2O nitridation and its pressure dependence have been investigated. For 900℃ nitridation, the onset pressure which starts nitridation of oxide lies between 10 and 50 Torr. Inferior as-grown characteristics, which are normally found in nitrided oxide, could be improved by N_2O nitridation at 50 Torr, slightly higher than the onset pressure. Additionally, we developed a new oxynitridation technology for thin gate dielectrics. The oxynitride was grown in light wet ambient by diluting NH_3 in N_2O gas at 50 Torr. With this technology, sufficient oxide growth rate and improved reliability can be achieved. This technology becomes very promising for gate dielectrics of next generation DRAM and Flash EEPROM devices.
社団法人電子情報通信学会の論文
1995-07-28