Inversion Layer Mobility of Subhalf-micron MOS Transistors

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概要

• 論文の詳細を見る

• We present the inversion layer mobility of a subhalf-micron MOS transistor, which is extracted from I-V measurements and the inversion charge based on the unified charge control model. It is shown that universality on the inversion layer mobility of a subhalf micron MOSFET is still valid, and the inversion layer mobility of short channel MOSFETs is very sensitive to the variations of series resistances.

• 社団法人電子情報通信学会の論文
• 1995-07-27

著者

• Lee Kyungho

  Advanced Device Development Dept. Ulsi Research Lab. Lg Semicon Co.

• Song Duheon

  Advanced Device Development Dept., ULSI Research Lab., LG Semicon Co.

• Park Jongsung

  Advanced Device Development Dept., ULSI Research Lab., LG Semicon Co.

• Song Duheon

  Advanced Device Development Dept. Ulsi Research Lab. Lg Semicon Co.

• Park Jongsung

  Advanced Device Development Dept. Ulsi Research Lab. Lg Semicon Co.

関連論文

• Inversion Layer Mobility of Subhalf-micron MOS Transistors

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