Bird's Beak free LOCOS Isolation for 256M DRAM

概要

論文の詳細を見る
A simple and bird's beak free isolation technology using LOCOS for 256M DRAM scale device is developed. In general, the length of bird's beak is controled under the ratio of pad nitride layer thickness and pad oxide layer thickness. To minimize the length of bird's beak, we use the native oxide created on the top of the chemically cleaned Si substrate as a pad oxide. With lowering the field oxidation ambient temperature to 950℃, the defects due to excess stress of the pad nitride layer disappeared and the length of bird's beak is more reduced. The evaluation of the electrical characteristics is in progress, but some results show that there are many points to be improved.
社団法人電子情報通信学会の論文
1997-07-25