A Simple Parameter Extraction Method for a Single Electron Transistor(SET) (先端デバイスの基礎と応用に関するアジアワークショップ)

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概要

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• In this paper, a simple parameter extraction method for a nearly symmetric single electron transistor(SET) is proposed and the accuracy of the extraction method is investigated with Monte-Carlo simulation. Based on peak values(V_<OH>, V_<OL>) of output voltages measured from the inverter circuit with a SET and a resistor, the analytic expression for the parameter extraction of the SET has been developed. It is verified that the extracted parameters of SET using new extraction method are within 5% from Monte-Carlo method. The advantage of the method proposed here in comparison with stability diagram method is that tunnel resistance can be extracted. The tunnel resistances for a nearly symmetric SET can be extracted if the capacitances are known from stability diagram. In the case of a symmetric SET, the total capacitances and tunnel resistances can be obtained without constructing stability diagram

• 社団法人電子情報通信学会の論文
• 2003-06-25

著者

• Jeong Yoon-ha

  Division Of Electrical And Computer Engineering Pohang University Of Science And Technology

• Lee Bong-hoon

  Division Of Electrical And Computer Engineering Pohang University Of Science And Technology

• Cheun Myung-jo

  Division Of Electrical And Computer Engineering Pohang University Of Science And Technology

関連論文

• A Simple Parameter Extraction Method for a Single Electron Transistor(SET) (先端デバイスの基礎と応用に関するアジアワークショップ)
• A Simple Parameter Extraction Method for a Single Electron Transistor (SET) (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))

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