[invited]GaIn(N)As/GaAs Long Wavelength Surface Emitting Lasers

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概要

• 論文の詳細を見る

• GaIn(N)As/GaAs long wavelength surface emitting lasers are expected as high performance and low cost light sources for optical data transmission systems. The highly strained GaInAs QW VCSELs are demonstrated at 1.1-1.2μm. A single mode power of 2mW and 140℃ operation is observed, and 2.5Gbps/10km transmission is confirmed. The MOCVD growth of the 1.3μm GaInNAs QW is established, and the threshold and temperature characteristics are the record level of 340A/cm^2 and 210K, respectively. The GaInNAs VCSELs by CBE shows a 1.2mA threshold and a single mode of 0.34mW for a 7×7μm^2 large aperture. A high-N GaInNAs QWs and Sb based quantum dots are also investigated towards long wavelength on the GaAs.

• 社団法人電子情報通信学会の論文
• 2003-12-13

著者

• Koyama Fumio

  P&i Lab. Tokyo Institute Of Technology

• Miyamoto Tomoyuki

  P&i Lab. Tokyo Institute Of Technology

• MIYAMOTO Tomoyuki

  P&I Lab., Tokyo Institute of Technology

• KOYAMA Fumio

  P&I Lab., Tokyo Institute of Technology

関連論文

• [invited]GaIn(N)As/GaAs Long Wavelength Surface Emitting Lasers
• GaIn(N)As/GaAs Long Wavelength Surface Emitting Lasers

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