Properties of in-plane-gate transistors for AMLCD

スポンサーリンク

概要

• 論文の詳細を見る

• We present a new kind of thin film transistors(TFT) for active matrix liquid crystal displays(AMLCD), the in- plane-gate(IPG)transistors. Direct current properties of such TFTs are investigated and the model describing their behaviour is proposed. The advantages of IPG transistors are outlined.

• 社団法人電子情報通信学会の論文
• 2000-10-13

著者

• Wieck A.

  Institute Of Experimental Physics Vi Ruhr-university

• Crell C.

  Infineon Technologies AG

• Muravski A.

  Institute of Applied Physics Problems

• Yakovenko S.

  Institute of Applied Physics Problems

• Crell C.

  Infineon Technologies Ag Mh E Be

関連論文

• Properties of In-Plane-Gate Transistors for AMLCD (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
• Properties of in-plane-gate transistors for AMLCD

スポンサーリンク