THE FABRICATION OF HIGH PERFORMANCE POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTOR

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概要

• 論文の詳細を見る

• To reduce the leakage current of thin film transistors, we did post-oxidation after gate polysilicon patterning. This post-oxidation makes structural change of gate poly-silicon. It reduces the leakage current with negligible reduction of on-current. The characteristics of thin film transistor(TFT) wad measured for various lengths of lightly-doped drain(LDD) region. This new device structure of TFT shows more stable off-current as increasing the source-drain voltages than that of conventional TFT. This reduction of leakage current was attributed to the reduction of drain junction field.

• 社団法人電子情報通信学会の論文
• 1995-10-23

著者

• Bae B.s.

  Samsung Electronics Co..

• Lee J.H.

  Samsung Electronics Co.

• Shin J.E.

  Samsung Electronics Co.

• Jin Y.S.

  Samsung Electronics Co.

• Mah S.B.

  Samsung Electronics Co.

• Shin J.e.

  Samsung Electronics Co..

• Mah S.b.

  Samsung Electronics Co..

• Jin Y.s.

  Samsung Electronics Co..

• Lee J.h.

  Samsung Display Device Corp. Ltd

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