C-2-2 CMOS RF ICs for Wireless Communication Networks
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概要
- 論文の詳細を見る
Feasibility of BiCMOS technology at multi-GHz frequencies has been previously demonstrated [1]-[4], which is, however, dominated by the performance of the bipolar transistor. This paper describes a CMOS transceiver chip developed based on a 0.25-μm CMOS technology. The transceiver chip incorporates an RF amplifier, a down-mixer, and an IF amplifier in the receive path, and an IF amplifier, an up-mixer, and RF amplifier in the transmit path.
- 一般社団法人電子情報通信学会の論文
- 1999-03-08
著者
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YAMAZAKI T.
NEC ULSI Device Development Labs.
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Drenski T
Nec C&c Media Res. Labs.
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Madihian M
Nec C&c Media Res. Labs.
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DRENSKI T.
NEC C&C Media Labs.
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DESCLOS L.
NEC C&C Media Labs.
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MADIHIAN M.
NEC C&C Media Labs.
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Kinoshita Y.
NEC ULSI Device Development Labs.
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Fujii H.
NEC ULSI Device Development Labs.
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Drenski T.
NEC C&C Media Res. Labs.
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Madihian M.
NEC C&C Media Res. Labs.
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Desclos L.
NEC C&C Media Res. Labs.
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