A Three-Mode Switched-LNA Using a Low Parasitic Capacitance MOSFET Switch(<Special Issue>Devices and Circuits for Next Generation Multi-Media Communication Systems)
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概要
- 論文の詳細を見る
A three-mode switched-LNA has been developed using a 0.25μm SiGe BiCMOS technology. The LNA features low noise figure (NF) performance, while achieving both low dissipation power and low distortion characteristics. The proposed MOSFET switch incorporating a newly developed switch circuit with a triple-well structure, which changes the LNA's mode, provides a parasitic capacitance of just 0.52 times that of a conventional MOSFET switch. This results in a significant NF improvement, by 0.16-0.33 dB, for the three-mode switched-LNA compared to a conventional LNA. Extensive studies of the MOSFET switch with regard to the structural parameters and the doping profiles are reported. Experimental results and the overall performance of a trial IC incorporating the three-mode switched-LNA are also given.
- 社団法人電子情報通信学会の論文
- 2003-06-01
著者
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Itoh Junji
Rf-semiconductor Development Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Nakatani Toshifumi
Devices Development Center Matsushita Electric Industrial Co. Ltd.
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Ogawa Koichi
Devices Development Center Matsushita Electric Industrial Co. Ltd.
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IMANISHI Ikuo
RF-Semiconductor Development Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
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Imanishi Ikuo
Rf-semiconductor Development Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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