A 10Gbase Ethernet Transceiver (LAN PHY) in a 1.8V, 0.18μm SOI/CMOS Technology

元データ 2003-04-01

概要

In this paper, we present a 10Gbase Ethernet Transceiver that is suitable for 10Gb/s Ethernet applications. The 10 Gbase Ethernet Transceiver LSI, which contains the highspeed interface and the fully integrated IEEE 802.3ae compliant logics, is fabricated in a 0.18μm SOI/CMOS process and dissipates 2.9W at 1.8V supply. By incorporating the monolithic approach and the use of the advance CMOS process, this 10GbE transceiver realizes a low power, low cost and compact solution for the exponentially increasing need of broadband network applications.

著者

Ueda Kimio The Authors Are With Mitsubishi Electric Corporation
Takasoh Jun The Authors Are With Mitsubishi Electric Corporation
Kondoh Harufusa The Authors Are With Mitsubishi Electric Corporation
YOSHIMURA Tsutomu The authors are with Mitsubishi Electric Corporation

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