A 10Gbase Ethernet Transceiver (LAN PHY) in a 1.8V, 0.18μm SOI/CMOS Technology

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概要

• 論文の詳細を見る

• In this paper, we present a 10Gbase Ethernet Transceiver that is suitable for 10Gb/s Ethernet applications. The 10 Gbase Ethernet Transceiver LSI, which contains the highspeed interface and the fully integrated IEEE 802.3ae compliant logics, is fabricated in a 0.18μm SOI/CMOS process and dissipates 2.9W at 1.8V supply. By incorporating the monolithic approach and the use of the advance CMOS process, this 10GbE transceiver realizes a low power, low cost and compact solution for the exponentially increasing need of broadband network applications.

• 2003-04-01

著者

• Ueda Kimio

  The Authors Are With Mitsubishi Electric Corporation

• Takasoh Jun

  The Authors Are With Mitsubishi Electric Corporation

• Kondoh Harufusa

  The Authors Are With Mitsubishi Electric Corporation

• YOSHIMURA Tsutomu

  The authors are with Mitsubishi Electric Corporation

関連論文

• A 10Gbase Ethernet Transceiver (LAN PHY) in a 1.8V, 0.18μm SOI/CMOS Technology

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